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PD - 97470
AUTOMOTIVE GRADE
Features
Low On-Resistance 175C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
AUIRF3710Z AUIRF3710ZS
HEXFET(R) Power MOSFET
D
VDSS = 100V RDS(on) = 18m
G S
Description
Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
ID = 59A
TO-220AB AUIRF3710Z
D2Pak AUIRF3710ZS
Absolute Maximum Ratings
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified.
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS EAS (tested) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
59 42 240 160 1.1 20
Units
A
c
Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally limited)d Single Pulse Avalanche Energy Tested Value Avalanche Current
W W/C V mJ A mJ C
c
h
170 200 See Fig.12a,12b,15,16 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
Thermal Resistance
RJC RCS RJA
k
Junction-to-Case
j
Parameter
Typ.
--- 0.50 ---
Max.
0.92 --- 40
Units
C/W
Case-to-Sink, Flat, Greased Surface Junction-to-Ambient (PCB Mount, steady state)
HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/
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1
3/19/10
AUIRF3710Z/S
Static Electrical Characteristics @ TJ = 25C (unless otherwise stated)
Parameter
V(BR)DSS VDSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
100 --- --- 2.0 35 --- --- --- --- --- 0.10 14 --- --- --- --- --- --- --- --- 18 4.0 --- 20 250 200 -200 V V/C m V S A nA
Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 1mA VGS = 10V, ID = 35A VDS = VGS, ID = 250A VDS = 50V, ID = 35A VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V
f
Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise stated)
Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 82 19 27 17 77 41 56 4.5 7.5 2900 290 150 1130 170 280 120 28 40 --- --- --- --- --- --- --- --- --- --- --- --- pF nC ID = 35A VDS = 80V VGS = 10V VDD = 50V ID = 35A RG = 6.8 VGS = 10V Between lead,
ns
f f
nH
D
6mm (0.25in.) from package
G S
and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 80V, = 1.0MHz VGS = 0V, VDS = 0V to 80V
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 50 100 59 A 240 1.3 75 160 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G D
p-n junction diode. TJ = 25C, IS = 35A, VGS = 0V TJ = 25C, IF = 35A, VDD = 25V di/dt = 100A/s
f
S
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
f
Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25C, L = 0.27mH, RG = 25, IAS = 35A, VGS =10V. Part not recommended for use above this value. ISD 35A, di/dt 380A/s, VDD V(BR)DSS, TJ 175C. Pulse width 1.0ms; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
This value determined from sample failure population, This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. R is measured at TJ approximately 90C. This is only applied to TO-220AB pakcage. starting TJ = 25C, L = 0.27mH,RG = 25, IAS = 35A, VGS =10V
2
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AUIRF3710Z/S
Qualification Information
Automotive (per AEC-Q101) Qualification Level
Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-220AB D PAK
2
Moisture Sensitivity Level Machine Model Human Body Model Charged Device Model RoHS Compliant
N/A MSL1 Class M4 AEC-Q101-002 Class H1C AEC-Q101-001 Class C3 AEC-Q101-005 Yes
ESD
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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AUIRF3710Z/S
1000
TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
1000
TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
BOTTOM
10
BOTTOM
1
4.5V
10
4.5V
0.1
20s PULSE WIDTH Tj = 25C
0.01 0.1 1 10 100 1 0.1 1
20s PULSE WIDTH Tj = 175C
10 100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
120
GFS, Forward Transconductance (S)
ID, Drain-to-Source Current ()
100
100
T J = 175C
TJ = 25C
80
T J = 175C
60
10
1
T J = 25C VDS = 25V 20s PULSE WIDTH
2 4 6 8 10
40
20
0
VDS = 15V 20s PULSE WIDTH
0 10 20 30 40 50 60 70
0
VGS, Gate-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance vs. Drain Current
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AUIRF3710Z/S
100000 VGS = 0V,
C iss C rss f = 1 MHZ =C +C , C gs gd ds = Cgd
12.0
SHORTED
ID= 35A
V GS, Gate-to-Source Voltage (V)
10.0 8.0 6.0 4.0 2.0 0.0 0 20
V DS= 80V V DS= 50V V DS= 20V
10000
C oss = Cds + C gd
C, Capacitance(pF)
Ciss
1000
Coss
100
Crss
10 1 10 100
40
60
80
100
V DS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
1000.00
1000
OPERATION IN THIS AREA LIMITED BY R (on) DS
100.00
TJ = 175C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100 100sec 10
10.00 TJ = 25C 1.00
1
1msec Tc = 25C Tj = 175C Single Pulse 1 10 10msec
0.10 0.2 0.4 0.6 0.8 1.0 1.2
V GS = 0V 1.4 1.6
0.1 100 1000 V DS , Drain-toSource Voltage (V)
V SD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
AUIRF3710Z/S
60 50
ID, Drain Current (A)
3.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
2.5
ID = 59A V GS = 10V
40 30 20 10 0 25 50 75 100 125 150 175 TC , Case Temperature (C)
2.0
1.5
1.0
0.5
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (C)
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Normalized On-Resistance vs. Temperature
10
Thermal Response ( Z thJC )
1
D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
0.1
0.01
0.001 1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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AUIRF3710Z/S
15V
300
EAS , Single Pulse Avalanche Energy (mJ)
VDS
L
DRIVER
250
ID 15A 25A BOTTOM 35A TOP
RG
VGS 20V
D.U.T
IAS tp
200
+ V - DD
A
150
0.01
100
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
50
0 25 50 75 100 125 150 175
Starting TJ , Junction Temperature (C)
I AS
Fig 12b. Unclamped Inductive Waveforms
QG
Fig 12c. Maximum Avalanche Energy vs. Drain Current
10 V
QGS VG QGD
5.0
V GS(th) Gate threshold Voltage (V)
4.0
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
3.0
ID = 250A
50K 12V .2F .3F
2.0
D.U.T. VGS
3mA
+ V - DS
1.0 -75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( C )
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 14. Threshold Voltage vs. Temperature
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7
AUIRF3710Z/S
1000
Duty Cycle = Single Pulse
100
Avalanche Current (A)
0.01
10
Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses
0.05 0.10
1
0.1 1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
200
EAR , Avalanche Energy (mJ)
150
TOP Single Pulse BOTTOM 10% Duty Cycle ID = 35A
100
50
0 25 50 75 100 125 150 175
Starting TJ , Junction Temperature (C)
Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav
Fig 16. Maximum Avalanche Energy vs. Temperature
8
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AUIRF3710Z/S
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
VDS V GS RG 10V
Pulse Width 1 s Duty Factor 0.1 %
RD
D.U.T.
+
- VDD
Fig 18a. Switching Time Test Circuit
VDS 90%
10% VGS
td(on) tr t d(off) tf
Fig 18b. Switching Time Waveforms
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9
AUIRF3710Z/S
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUIRF3710Z
IR Logo
YWWA
XX or XX
Date Code Y= Year WW= Work Week A= Automotive, Leadfree
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRF3710Z/S
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
Part Number
AUIRF3710ZS
IR Logo
YWWA
XX or XX
Date Code Y= Year WW= Work Week A= Automotive, Leadfree
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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11
AUIRF3710Z/S
D2Pak Tape & Reel Infomation
TRR
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
TRL
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
4
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039) 24.40 (.961) 3
30.40 (1.197) MAX. 4
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AUIRF3710Z/S
Ordering Information
Base part number Package Type AUIRF3710Z AUIRF3710ZS AUIRF3710ZS AUIRF3710ZS TO-220 D2Pak Standard Pack Complete Part Number Form Quantity Tube 50 AUIRF3710ZS Tube 50 AUIRF3710ZS Tape and Reel Left 800 AUIRF3710ZSTRL Tape and Reel Right 800 AUIRF3710ZSTRR
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AUIRF3710Z/S
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the "AU" prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR's terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR's standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifically designated by IR as military-grade or "enhanced plastic." Only products designated by IR as military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation "AU". Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR's Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
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